Insulated Gate Bipolar Transistor IGBT G40n120d to-247

Get high-quality Insulated Gate Bipolar Transistor IGBT G40n120d to-247 at our factory. We offer reliable and efficient electronic components with quick delivery.
Request a Quote

PRODUCTS DETAILS

Basic Info.

Model NO.
G40N120D
Batch Number
2021
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000

Product Description

Insulated Gate Bipolar Transistor IGBT G40n120d to-247 Insulated Gate Bipolar Transistor IGBT G40n120d to-247 Insulated Gate Bipolar Transistor IGBT G40n120d to-247 Insulated Gate Bipolar Transistor IGBT G40n120d to-247
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage VCES 1200 V
Gate- Emitter Voltage VGES ±20 V
Collector Current IC(T=25ºC) 80 A
Collector Current  (Tc=100ºC) 40 A
Pulsed Collector Current ICM 160 A
Diode Continuous Forward Current I@TC = 100 °C 20 A
Diode Maximum Forward Current IFM 60 A
Total Dissipation TC=25ºC PD 278 W
TC=100ºC PD 150 W
Junction Temperature Tj 150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.9V
@ IC =40A and VGE=15V
Applications
Inverter welding machine
General frequency converter
UPS
Motor control
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
G40N120D TO-247 G40N120D Pb-free Tube 300/box
  Insulated Gate Bipolar Transistor IGBT G40n120d to-247

Contact us

Please feel free to give your inquiry in the form below We will reply you in 24 hours